ATOMICALLY FLAT III-ANTIMONIDE EPILAYERS GROWN USING LIQUID PHASE EPITAXY

Unintentionally doped InN grown onto an atomically flat AlN intermediate layer using plasma-assisted molecular beam epitaxy

1 Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C. 2 Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C. 3 Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan, R.O.C. 4 Material Science Center, National Tsing Hua University, Hsinchu, Tai...

Liquid-gated interface superconductivity on an atomically flat film.

Liquid/solid interfaces are attracting growing interest not only for applications in catalytic activities and energy storage, but also for their new electronic functions in electric double-layer transistors (EDLTs) exemplified by high-performance organic electronics, field-induced electronic phase transitions, as well as superconductivity in SrTiO(3) (ref. 12). Broadening EDLTs to induce superc...

Optically detected magnetic resonance studies of point defects in quaternary GaNAsP epilayers grown by vapor phase epitaxy

RF Performance of Planar III–V Nanowire-Array Transistors Grown by Vapor–Liquid–Solid Epitaxy

The radio frequency (RF) performance of a III–V transistor comprised of nanowire (NW) high-electron mobility channels, grown by planar vapor–liquid–solid epitaxy in parallel arrays, is examined. An equivalent small-signal circuit model was used to study the contributing extrinsic and intrinsic passive elements on the NW performance as a function of bias and gate length (LG). Adequate intrinsic ...

III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy